Infineon IRL2910STRLPBF Power MOSFET: Datasheet, Pinout, and Application Circuit Guide
The Infineon IRL2910STRLPBF is a highly efficient N-channel Power MOSFET utilizing advanced HEXFET technology, designed primarily for high-speed switching applications. This device is renowned for its exceptionally low on-state resistance (RDS(on)) and high current handling capability, making it a cornerstone component in power management circuits across various industries.
Datasheet Overview: Key Specifications
The IRL2910STRLPBF is characterized by its robust performance metrics. Key absolute maximum ratings include a drain-to-source voltage (VDS) of 100V and a continuous drain current (ID) of 42A at a case temperature of 25°C. Its most significant feature is its very low typical RDS(on) of just 9.3 mΩ at a gate-to-source voltage (VGS) of 10V. This low resistance directly translates to reduced conduction losses and higher overall system efficiency. The device is housed in a D2PAK (TO-263) package, which offers superior thermal performance for high-power applications.
Pinout Configuration
The pinout for the D2PAK package is standard:
1. Gate (G): This pin controls the conductivity between the drain and source. A voltage typically above the 2V threshold (up to a max of ±20V) is applied here to turn the MOSFET on.
2. Drain (D): This is the input terminal connected to the load. The tab of the package is electrically connected to the drain pin, which is crucial for both electrical connection and heat sinking.
3. Source (S): This is the output terminal, typically connected to ground.
Correct identification of these pins is critical to prevent catastrophic damage to the device and the circuit.
Application Circuit Guide: A Basic Switch
A fundamental application circuit for the IRL2910STRLPBF is a high-current load switch. Here’s a breakdown of a typical configuration:
Load: A high-current device (e.g., a DC motor, high-power LED array) is placed between the positive supply (VDD) and the MOSFET's Drain pin.
MOSFET: The Source pin is connected directly to ground.
Gate Control: A microcontroller or logic circuit provides the switching signal. A gate resistor (e.g., 10Ω to 100Ω) is often placed in series to dampen oscillations and limit peak current during switching.
Protection Diode (Flyback Diode): When driving inductive loads like motors or solenoids, a flyback diode must be connected in reverse bias across the load (anode to Source, cathode to Drain) to protect the MOSFET from voltage spikes generated when the load is switched off.
This simple circuit allows a low-power signal from a microcontroller to efficiently control a high-power load with minimal losses, thanks to the MOSFET's low RDS(on).
Design Considerations
1. Gate Driving: While the IRL2910 has a standard threshold voltage, ensuring a strong and fast gate drive signal (e.g., 10V) is essential to fully enhance the MOSFET and minimize switching losses.
2. Heat Management: Despite its low resistance, at high currents, power dissipation (P = I² RDS(on)) becomes significant. A properly sized heatsink attached to the drain tab is mandatory for any continuous high-current operation.
3. ESD Protection: The gate oxide is vulnerable to electrostatic discharge. Handle with appropriate precautions.
ICGOODFIND Summary
The Infineon IRL2910STRLPBF stands out as a highly reliable and efficient solution for demanding power switching tasks. Its standout combination of very low RDS(on), high current capacity, and robust thermal package makes it an ideal choice for applications such as motor controls, DC-DC converters, and power supply units. Proper attention to gate driving, heatsinking, and circuit protection will ensure optimal performance and longevity.
Keywords: Power MOSFET, Low RDS(on), High-Current Switching, HEXFET Technology, D2PAK Package.
