Infineon IPT013N08NM5LF OptiMOS 5 Power MOSFET: Datasheet, Application, and Features
The relentless pursuit of higher efficiency, power density, and reliability in power electronics drives the continuous innovation in semiconductor technology. The Infineon IPT013N08NM5LF, a member of the esteemed OptiMOS™ 5 power MOSFET family, stands as a testament to this progress. This device is engineered to set new benchmarks in performance for a wide range of demanding applications.
Key Features and Benefits
The IPT013N08NM5LF is an N-channel MOSFET built on Infineon's advanced superjunction technology. Its key specifications include a drain-source voltage (VDS) of 80 V and a continuous drain current (ID) of 180 A at 25°C, showcasing its ability to handle significant power levels.
The most standout feature of this MOSFET is its exceptionally low typical on-state resistance (RDS(on)) of just 1.3 mΩ. This ultra-low resistance is paramount as it directly translates to minimized conduction losses. When a MOSFET is on, the primary source of power loss is the heat generated due to its RDS(on). By reducing this value to an industry-leading low, the IPT013N08NM5LF operates with superior efficiency, runs cooler, and often allows for the design of more compact systems by reducing the need for large heat sinks.
Furthermore, the device boasts an optimized gate charge (Qg). This characteristic is crucial for switching performance. A lower gate charge enables faster switching speeds, which reduces switching losses—another significant source of inefficiency in high-frequency circuits. The combination of low RDS(on) and low Qg makes this MOSFET a top choice for high-frequency switching power supplies.
The package itself, the SuperSO8, is a significant advantage. It offers a very low parasitic inductance and a highly efficient thermal performance due to its exposed pad. This allows heat to be effectively transferred away from the silicon die to the printed circuit board (PCB), enhancing the overall power handling capability and reliability of the system.
Primary Applications
The robust feature set of the IPT013N08NM5LF makes it exceptionally suitable for a variety of high-current and high-efficiency applications, including:
Synchronous Rectification in Switched-Mode Power Supplies (SMPS): Its low RDS(on) is ideal for replacing Schottky diodes in the secondary side of AC-DC and DC-DC converters, drastically improving efficiency.
Motor Control and Drives: Used in H-bridge configurations for controlling brushed DC and brushless DC (BLDC) motors in industrial automation, robotics, and automotive systems.
Server and Telecom Power Supplies: Where high efficiency and power density are non-negotiable for meeting modern energy standards and reducing operational costs.
Battery Management Systems (BMS) and Protection: Serving as a highly efficient load switch in applications requiring minimal voltage drop and power loss.
Datasheet Overview
The official datasheet is the ultimate source of information for design engineers. It provides comprehensive details necessary for successful circuit integration, including:
Absolute Maximum Ratings: The critical limits for parameters like voltage, current, and temperature.
Electrical Characteristics: Detailed tables and graphs for RDS(on), gate threshold voltage, capacitances, and switching times across various conditions.
Thermal Characteristics: Key metrics such as junction-to-ambient and junction-to-case thermal resistance.
Safe Operating Area (SOA) Graphs: Illustrating the current and voltage limits within which the device can operate without damage.
Package Outline and Recommended PCB Layout: Essential for optimizing thermal and electrical performance.
ICGOOODFIND
The Infineon IPT013N08NM5LF OptiMOS 5 Power MOSFET is a high-performance solution engineered for maximum efficiency and power density. Its industry-leading 1.3 mΩ RDS(on), low gate charge, and thermally efficient SuperSO8 package make it an superior choice for designers tackling the challenges of modern power conversion in applications from server farms to advanced motor drives.
Keywords:
1. OptiMOS 5
2. Low RDS(on)
3. Power Efficiency
4. Synchronous Rectification
5. SuperSO8 Package
