Infineon IPD80R900P7ATMA1: Redefining High-Voltage Switching Efficiency

The Infineon IPD80R900P7ATMA1 represents a significant advancement in high-voltage power MOSFET technology, combining ultra-low on-state resistance with exceptional breakdown voltage capabilities. As part of Infineon’s CoolMOS™ P7 series, this 900V, 80 mΩ MOSFET is engineered for applications demanding high efficiency, robustness, and thermal performance. With its superior switching characteristics and optimized package design, the device is ideal for use in switched-mode power supplies (SMPS), industrial motor drives, renewable energy systems, and EV charging infrastructure.

A key highlight of the IPD80R900P7ATMA1 is its remarkably low gate charge (Qg) and output capacitance (Coss), which significantly reduce switching losses and enable higher frequency operation. This allows designers to achieve greater power density without compromising thermal management. The MOSFET’s superjunction technology ensures minimal conduction losses even under high-voltage conditions, making it particularly suitable for hard-switching and resonant topologies like LLC converters.

Additionally, the component features enhanced avalanche ruggedness and improved body diode performance, increasing system reliability in demanding environments. The TO-220 full-pack (IPD) package offers improved isolation and mechanical durability while supporting efficient heat dissipation.

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ICGOOODFIND:

The Infineon IPD80R900P7ATMA1 sets a new benchmark in high-voltage power MOSFETs by delivering an optimal balance of low RDS(on), high breakdown voltage, and exceptional switching performance. Its advanced CoolMOS™ P7 technology makes it a top choice for high-efficiency, high-power applications.

Keywords:

CoolMOS™ P7, High Voltage MOSFET, Low RDS(on), Switching Efficiency, Superjunction Technology