Infineon IPD90N10S4L06ATMA1: A High-Performance 100V OptiMOS Power MOSFET

In the realm of power electronics, efficiency, reliability, and thermal performance are paramount. The Infineon IPD90N10S4L06ATMA1 stands out as a premier solution, embodying the advanced OptiMOS™ technology platform from a global semiconductor leader. This 100V N-channel power MOSFET is engineered to meet the rigorous demands of modern switch-mode power supplies (SMPS), motor control systems, and a wide array of industrial applications.

A key highlight of this component is its exceptionally low on-state resistance (RDS(on)). With a maximum of just 9.0 mΩ at 10 V, it significantly minimizes conduction losses. This allows for higher efficiency power conversion, which is critical for reducing energy consumption and heat generation in end products. The low RDS(on) is a direct benefit of Infineon's superior trench technology and optimized cell structure.

Furthermore, the device boasts outstanding switching performance. The low gate charge (Qg) and figure-of-merit (FOM) ensure rapid switching transitions, which is essential for high-frequency operation. This capability enables designers to increase the switching frequency of their circuits, leading to the use of smaller passive components like inductors and capacitors, thereby reducing the overall system size and cost.

The IPD90N10S4L06ATMA1 is also designed with robustness in mind. It features a high avalanche ruggedness and an extended safe operating area (SOA), providing enhanced reliability under stressful conditions such as voltage spikes and overloads. The part is housed in a TO-LL package (D2PAK), which offers superior thermal characteristics compared to standard D2PAK packages. This improved thermal efficiency ensures that the MOSFET can operate at lower temperatures, further boosting long-term reliability and performance.

Compliance with the RoHS directive and qualification according to the highest quality standards make it a suitable choice for automotive and industrial applications where durability is non-negotiable.

ICGOOODFIND: The Infineon IPD90N10S4L06ATMA1 is a top-tier 100V power MOSFET that excels by delivering a powerful combination of ultra-low conduction loss, superior switching speed, and exceptional thermal performance. It is an optimal choice for designers aiming to maximize efficiency and power density in their next-generation power systems.

Keywords: OptiMOS, Low RDS(on), High Switching Performance, TO-LL Package, Power Efficiency.