Infineon IPTG210N25NM3FD: 250V OptiMOS 3 Power MOSFET for High-Efficiency Switching Applications
In the realm of power electronics, achieving higher efficiency and power density is a constant pursuit. The Infineon IPTG210N25NM3FD, a member of the renowned OptiMOS™ 3 family, stands out as a high-performance 250V N-channel power MOSFET engineered specifically to meet these demanding goals in switching applications.
This device is built upon Infineon's advanced trench technology, which is the cornerstone of its exceptional performance. The extremely low typical on-state resistance (R DS(on)) of just 2.1 mΩ is a key figure of merit. This ultra-low resistance directly translates to minimal conduction losses when the MOSFET is fully switched on. As a result, systems experience significantly reduced power dissipation, which is critical for improving overall energy efficiency and simplifying thermal management designs. This allows for cooler operation and the potential for smaller heatsinks or even their complete elimination in some cases, contributing to a more compact form factor.
Beyond its stellar static performance, the IPTG210N25NM3FD excels in dynamic operation. It features outstanding switching characteristics, enabling very fast turn-on and turn-off times. This swift switching is paramount for high-frequency operation, allowing designers to increase the switching frequency of their power converters (such as SMPS, motor drives, and Class-D audio amplifiers). A higher switching frequency, in turn, permits the use of smaller passive components like inductors and transformers, further boosting the power density of the final design. The MOSFET's low gate charge (Q G) ensures that the drive circuitry requirements are simplified, reducing driving losses and making it easier to control.
The 250V drain-source voltage rating makes it an ideal candidate for a wide array of applications. It is perfectly suited for use in industrial power supplies, telecom and server infrastructure, professional audio systems, and renewable energy solutions like solar inverters. Its robustness and reliability are ensured through a committed avalanche ruggedness and a high maximum junction temperature of 175°C, providing designers with a generous safety margin in harsh operating environments.
Housed in a TOLL (TO-Leadless) package, the MOSFET offers the best of both worlds: the superior thermal and electrical performance of a leadless package and the mechanical robustness of a surface-mount device (SMD). This package features an exposed top side for efficient cooling and a very low package inductance, which is crucial for minimizing voltage spikes during high-speed switching.
ICGOOODFIND: The Infineon IPTG210N25NM3FD is a superior power MOSFET that delivers a potent combination of ultra-low conduction loss, fast switching speed, and high ruggedness. Its optimized performance is a catalyst for creating highly efficient and compact power conversion systems across industrial, computing, and communications platforms.
Keywords: Low RDS(on), High-Efficiency Switching, OptiMOS 3, TOLL Package, 250V MOSFET.
