Infineon IGD06N60T: High-Efficiency 600V IGBT in Compact D-Pak Package

The Infineon IGD06N60T is a robust 600V, 6A IGBT (Insulated Gate Bipolar Transistor) designed for high-efficiency switching applications. Leveraging Infineon’s advanced TRENCHSTOP™ technology, this device delivers low saturation voltage and minimal switching losses, making it ideal for energy-conscious designs in consumer and industrial electronics.

Housed in the space-saving D-Pak (TO-252) package, the IGD06N60T offers excellent thermal performance and power density, enabling compact PCB layouts without compromising reliability. Its high current handling capability and ruggedness suit demanding applications such as switch-mode power supplies (SMPS), motor controls, and inverters.

Key features include:

- Low VCE(sat) for reduced conduction losses

- Fast switching performance

- Integrated freewheeling diode for improved reverse recovery

- High temperature operation (up to 150°C)

The IGD06N60T exemplifies Infineon’s commitment to combining power efficiency with mechanical versatility, providing designers with a component that enhances both performance and form factor.

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ICGOO FIND: The Infineon IGD06N60T merges high-voltage capability with compact packaging, offering an optimal balance of efficiency, thermal management, and design flexibility for modern power systems.

Keywords:

1. TRENCHSTOP™ Technology

2. Low Saturation Voltage

3. Fast Switching

4. Thermal Performance

5. Compact Design