Infineon IPD50R950CEAUMA1: A 950V CoolMOS™ Power Transistor for High-Efficiency Applications

The relentless pursuit of higher efficiency and power density in modern electronics drives the need for advanced semiconductor solutions. At the forefront of this innovation is Infineon Technologies with its IPD50R950CEAUMA1, a 950V superjunction MOSFET from the renowned CoolMOS™ CE family. This power transistor is engineered to set new benchmarks in performance for demanding high-voltage applications.

A key highlight of the IPD50R950CEAUMA1 is its exceptionally low specific on-state resistance (R DS(on)) of just 50 mΩ. This is achieved through Infineon's advanced superjunction (SJ) technology, which allows for a smaller chip size and superior switching performance compared to conventional planar MOSFETs. The low R DS(on) translates directly into minimized conduction losses, a critical factor for enhancing overall system efficiency. This makes the device an ideal choice for power supplies that must comply with stringent international energy efficiency regulations.

Furthermore, the transistor's high 950V drain-source voltage rating provides a significant safety margin, enhancing system robustness and reliability. This is particularly vital in applications like Switched-Mode Power Supplies (SMPS) and server & telecom power systems, where voltage spikes are common. The high voltage capability ensures stable operation under harsh conditions and contributes to a longer product lifespan.

Beyond its static performance, the IPD50R950CEAUMA1 excels in dynamic operation. It features low gate charge (Q G) and outstanding switching characteristics, which are paramount for reducing switching losses at high frequencies. By enabling higher switching frequencies, designers can utilize smaller passive components like inductors and capacitors, thereby increasing power density and reducing the overall size and weight of the final product.

Additional benefits include a low effective output capacitance (C OSS,er), which further softens the switching behavior and reduces turn-on losses. The device is also designed for ease of use, featuring a THD (through-hole) package for robust mechanical connectivity and efficient cooling.

ICGOOODFIND: The Infineon IPD50R950CEAUMA1 stands as a pinnacle of high-voltage power transistor design. By masterfully balancing an ultra-low on-resistance with fast switching capabilities and a high breakdown voltage, it provides a critical enabling technology for engineers to develop more efficient, compact, and reliable power conversion systems.

Keywords: CoolMOS™, High Efficiency, Low R DS(on), 950V, Power Transistor